onsemi FDMS7672AS
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-09-16
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
onsemiFDMS0308AS
2.5W(Ta),50W(Tc) 20V 3V@1mA 47nC@ 10 V 1N 30V 2.8m¦¸@ 24A,10V 24A,49A 3nF@15V QFN 6mm*5mm*1.1mm
InfineonIRFH8316TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
onsemiFDMS0309AS
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
VishaySIR818DP-T1-GE3
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
VishaySIR464DP-T1-GE3
Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Descrizioni
Descrizioni di onsemi FDMS7672AS fornite dai suoi distributori.
Trans MOSFET N-CH 30V 19A 8-Pin Power 56 T/R
N-Channel PowerTrench® SyncFET™ 30V, 42A, 4mΩ
MOSFET PT7 30/20V Nch PowerTrench SyncFET
Power Field-Effect Transistor, 19A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 30V 4.0 Mohm Pqfn56 Rohs Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 30V SYNCFET POWER56
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.82 nF
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation45 W
Rds On Max4 mΩ
Resistance3.5 MΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità