onsemi FDMS3672
$ 1.634
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Cronologia dell'inventario
Tendenza a 3 mesi: -22.89%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-10-04
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
Parti correlate
InfineonIRF7853PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
Descrizioni
Descrizioni di onsemi FDMS3672 fornite dai suoi distributori.
N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ
100V, 22A,23 OHM, NCH ULTRAFET TRENCH MOSFET - 8LD,MLP,DUAL,NON-JEDEC, 5X6MM
N-Channel 100 V 23 mOhm Surface Mount Power UltraFET Trench Mosfet - Power 56
2.5W(Ta)，78W(Tc) 20V 4V@ 250µA 44nC@ 10V 1individualNChannel 100V 23mΩ@ 7.4A,10V 7.4A，22A 2.68nF@50V QFN SMD mount 6mm*5mm*800μm
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC-to-DC converters.
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:7.4A; Resistance, Rds On:0.023ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:30A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS3672; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -22.89%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)22 A
Current22 A
Current Rating22 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vds)100 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time36 ns
Turn-On Delay Time23 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height800 µm
Length5 mm
Width6 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità