onsemi FDMQ8203
$ 0.974
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Cronologia dell'inventario
Tendenza a 3 mesi: -95.36%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-30
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
Parti correlate
InfineonBSP320SH6327XTSA1
Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223
Descrizioni
Descrizioni di onsemi FDMQ8203 fornite dai suoi distributori.
This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
Trans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R
Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
FDMQ8203 Series 100 V 6 A Bridge Rectifier - MLP4 (5 x 5 mm)
MOSFET 2N/2P-CH 100V/80V 12-MLP
Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
2.5W 20V 4V@ 250µA 5nC@ 10V 2N+2PChannel 100V，80V 110mΩ@ 3A,10V 3.4A，2.6A 210pF@50V MLP-12 SMD mount 5mm*4.5mm*800μm
MOSFET, NNPP CH, MLP 4.5X5; Transistor Polarity:Dual N and Dual P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:22W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:12; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -95.36%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins12
Number of Terminals12
Weight210 mg
Technical
Continuous Drain Current (ID)3.4 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationDual
Fall Time2.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels4
Number of Elements4
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max110 mΩ
Rise Time2.8 ns
Threshold Voltage3 V
Dimensions
Height800 µm
Length5 mm
Width4.5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità