onsemi FDME905PT
$ 0.308
Production
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Distributori di stock non autorizzati
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.54%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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SiB488DK Series N-Channel 12 V 20 mOhm 13 W Power Mosfet -PowerPAK SC-75-6L
Descrizioni
Descrizioni di onsemi FDME905PT fornite dai suoi distributori.
TRANSISTOR, P-CHANNEL, POWERTRENCH MOSFET, -12V, -8A, 22 MOHM, LOW PROFILE
P-Channel PowerTrench® MOSFET -12V, -8A, 22mΩ
P-Ch. Er Trench Mosfet Rohs Compliant: Yes |Onsemi FDME905PT
Trans MOSFET P-CH 12V 8A 6-Pin MicroFET T/R
Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
onsemi PMOS PowerTrench, Vds=12 V, 8 A, MicroFET 2 x 2, , 6
MOSFET, P-CHANNEL, 12V, 8A, UFET;
POWER FIELD-EFFECT TRANSISTOR, 8
MOSFET, P CH, 12V, 8A, MFET1.6X1.6; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.54%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance2.315 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation700 mW
Rds On Max22 mΩ
Rise Time8 ns
Threshold Voltage-700 mV
Turn-Off Delay Time90 ns
Turn-On Delay Time9.5 ns
Dimensions
Height500 µm
Length1.6 mm
Width1.6 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità