onsemi FDMC86520DC

N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 60V, 40A, 6.3mΩ
$ 1.68
NRND
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
AvnetFDMC86520DC29253K
5h
Newark
2
FDMC86520DC28.8261Cut Tape
Verical
3
FDMC86520DC1525218
Rochester ElectronicsFDMC86520DC14.468
3h
DigiKey
3
FDMC86520DCCT-ND54651Cut Tape

Schede tecniche e documenti

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Technical Drawing1 pagina2 anni fa
Datasheet8 pagine2 anni fa

IHS

Master Electronics

onsemi

Fairchild Semiconductor

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Supply Chain

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-09-19
Lifecycle StatusNRND (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FDMC86520DC fornite dai suoi distributori.

N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 60V, 40A, 6.3mΩ
onsemi
PT7 60V/20V Nch Dual cool Power Trench MOSFET - 8LD, PQFN, DUAL JEDEC MO-240 BA,3.3X3.3MM, DUAL COOL
Newark
Power Field-Effect Transistor, 17A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
IHS
MOSFET, N-CH, 40A, 60V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power
Farnell
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Fairchild Semiconductor

Immagini

Augswan
Farnell

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