onsemi FDMC86340
$ 0.942
Production
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Cronologia dell'inventario
Tendenza a 3 mesi: -26.06%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-06-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8
InfineonBSZ075N08NS5ATMA1
TRANSISTOR, MOSFET, N-CHANNEL NORMAL LEVEL, POWER-TRANSISTOR, 80V, ID 73A
Descrizioni
Descrizioni di onsemi FDMC86340 fornite dai suoi distributori.
PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate Power Trench® MOSFET 80V, 48A, 6.5mΩ
2.3W(Ta),54W(Tc) 20V 4V@ 250¦ÌA 53nC@ 10V 1N 80V 6.5m¦¸@ 14A,10V 14A,48A 3.885nF@40V QFN 800¦Ìm
N-CHANNEL SHIELDED GATE POWER TRENCH MOSFET Power Field-Effect Transistor, 14A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N-CH, 48A, 80V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.4V; Power
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -26.06%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.885 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max6.5 mΩ
Rise Time16 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time20 ns
Dimensions
Height800 µm
Length3.4 mm
Width3.4 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità