onsemi FDMC8554
$ 0.609
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-02-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi FDMC8554 fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ
FDMC8554 Series 20 V 16.5 A 5 mOhm N-Channel Power Trench Mosfet - MLP-8
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for switching performance and ultra low rDS(on).
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:16.5A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:41A; No. of Pins:8; Power Dissipation:2W; SMD Marking:FDMC8554; Voltage, Vds Max:20V; Voltage, Vgs th Max:3V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight165.33333 mg
Technical
Continuous Drain Current (ID)16.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.38 nF
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max5 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time13 ns
Dimensions
Height950 µm
Length3 mm
Width3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità