Infineon IRF3717TRPBF
$ 0.81
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF3717TRPBF | 0 | 10 | Bulk | 10h | |||||||
| Farnell | IRF3717TRPBF | 0 | 1 | Cut Tape | 18h | |||||||
| Win Source | WS-IRF3717TRPBF | 880 | 75 | 19h | ||||||||
| Worldway Electronics | IRF3717TRPBF | 15.061 | 7 | Tape & Reel | 18h | |||||||
| Aztech | IRF3717TRPBF | 12.376 | 14h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3717TRPBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
Parti correlate
InfineonIRF7457TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.5Milliohms;ID 15A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7456TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.0047Ohm;ID 16A;SO-8;PD 2.5W;VGS +/-12V;-55
Descrizioni
Descrizioni di Infineon IRF3717TRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 3.7Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 20V 4.4 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 20V 20A 8-Pin SOIC T/R
Power Field-Effect Transistor, 20A I(D), 20V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Drain Source On Resistance @ 10V:4.4mohm RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4.4 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.89 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max4.4 mΩ
Resistance4.4 MΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)20 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3717TRPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità