onsemi FDMC8321L
$ 0.634
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Cronologia dell'inventario
Tendenza a 3 mesi: -46.15%
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|---|---|---|---|
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-12-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Descrizioni
Descrizioni di onsemi FDMC8321L fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 40V, 49A, 2.5mΩ
N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N-CH, 49A, 40V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 49A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -46.15%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time4.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time6.1 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time12 ns
Dimensions
Height1.15 mm
Length3.3 mm
Width3.3 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità