onsemi FDMC6675BZ
$ 0.508
NRND
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo onsemi FDMC6675BZ, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-12
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
Parti correlate
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MOSFET P-CH 30V 14.9A 8SOIC / Trans MOSFET P-CH 30V 14.9A 8-Pin SOIC N T/R
Diodes Inc.DMP3020LSS-13
DMP3020LSS: 30 V 14 mOhm Single P-Channel Enhancement Mode Mosfet - SOIC-8
Diodes Inc.DMG4407SSS-13
1.45W(Ta) 25V 3V@ 250¦ÌA 20.5nC@ 10 V 1P 30V 11m¦¸@ 12A,20V 9.9A 2.246nF@15V SOIC-8 1.75mm
Descrizioni
Descrizioni di onsemi FDMC6675BZ fornite dai suoi distributori.
P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ
P-Channel 30 V 20 A 14.4 mOhm 36 W SMT MOSFET - PowerWDFN-8
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R
Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
2.3W(Ta),36W(Tc) 25V 3V@ 250¦ÌA 65nC@ 10 V 1P 30V 14.4m¦¸@ 9.5A,10V 9.5A,20A 2.865nF@15V MLP-8 3.3mm*3.3mm*730¦Ìm
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)9.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance14.4 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.865 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation36 W
Rds On Max14.4 mΩ
Resistance14.4 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage-1.9 V
Turn-Off Delay Time44 ns
Turn-On Delay Time11 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità