onsemi FDMC3612
$ 0.311
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Cronologia dell'inventario
Tendenza a 3 mesi: -26.13%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-07-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Mosfet, N-Ch, 100V, 3.8A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMN10H120SFG-13
Diodes Inc.DMN10H099SFG-7
Mosfet, N-Ch, 100V, 4.2A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMN10H099SFG-7
Diodes Inc.DMN10H120SFG-7
Mosfet, N-Ch, 100V, 3.8A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMN10H120SFG-7
Descrizioni
Descrizioni di onsemi FDMC3612 fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ
N-Channel 100 V 12 A 110 mOhm Surface Mount PowerTrench® MOSFET-MLP 3.3 x 3.3
Power Field-Effect Transistor, 3.3A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -26.13%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight180 mg
Technical
Continuous Drain Current (ID)3.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance880 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max110 mΩ
Rise Time2.8 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7.4 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità