onsemi FDMA3023PZ
$ 0.466
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Cronologia dell'inventario
Tendenza a 3 mesi: -22.63%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-17
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
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Descrizioni
Descrizioni di onsemi FDMA3023PZ fornite dai suoi distributori.
Dual P-Channel PowerTrench® MOSFET -30V , -2.9A, 90mΩ
FDMA3023 Series -30 V -2.9 A 90 mOhm Dual P-Ch. PowerTrench® MOSFET - MicroFET-6
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
MOSFET, PP CH, 30V, 2.9A, MICROFET2X2; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.071ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -22.63%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)2.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vds)-30 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance530 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels2
Number of Elements2
Power Dissipation1.4 W
Rds On Max90 mΩ
Resistance90 MΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time62 ns
Turn-On Delay Time5 ns
Dimensions
Height850 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità