onsemi FDMA3027PZ

MOSFET, P-CH, DUAL, 30V/25V, 6MLP; Transistor Polarity: Dual P Channel; Continuou
Obsolete
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDMA3027PZ.

IHS

Datasheet9 pagine4 anni fa
Datasheet0 pagine0 anni fa

Future Electronics

onsemi

Newark

Farnell

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Supply Chain

Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-06-15
Lifecycle StatusObsolete (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

Parti correlate

Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Diodes Inc.DMP3130L-7
P-Channel 30 V 77 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
Diodes Inc.ZXMN3A14FTA
ZXMN3A14 Series 30 V 0.065 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
Diodes Inc.DMP3098LDM-7
P-Channel 30 V 65 mOhm Surface Mount Enhancement Mode Mosfet - SOT-26-6
Single N-Channel 30 V 68 mO 3 nC Surface Mount Power Mosfet - SOT-23

Descrizioni

Descrizioni di onsemi FDMA3027PZ fornite dai suoi distributori.

MOSFET, P-CH, DUAL, 30V/25V, 6MLP; Transistor Polarity:Dual P Channel; Continuou
Dual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ
Transistor MOSFET Array Dual P-CH 30V 3.3A 6-Pin MicroFET T/R
FDMA3027PZ Series -30 V -3.3 A 87 mOhm Dual P-Channel Power Trench Mosfet
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
DC DC Converters 1 (Unlimited) 1 8-SIP Module, 7 Leads Through Hole Isolated Module ITE (Commercial) ECONOLINE RS3 (3W) -40°C~71°C 0.86Lx0.36W x 0.44 H 21.8mmx9.2mmx11.1mm CONV DC/DC 3W SNGL 5V OUT SIP8
MOSFET, P-CH, DUAL, 30V/25V, 6MLP; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:1.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.

Alias del produttore

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  • ON SEMICONDUCTORS
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  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd