onsemi FDMA291P
$ 0.253
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Cronologia dell'inventario
Tendenza a 3 mesi: +3.01%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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VishaySI5457DC-T1-GE3
Single P-Channel 20 V 36 mO 38 nC Surface Mount Mosfet - ChipFET-1206-8
Descrizioni
Descrizioni di onsemi FDMA291P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ
Trans MOSFET P-CH 20V 6.6A 6-Pin WDFN EP T/R / MOSFET P-CH 20V 6.6A MFET 2X2
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.6A; On Resistance, Rds(on):0.042ohm; Rds(on) Test Voltage, Vgs:-0.7V; Threshold Voltage, Vgs Typ:8V ;RoHS Compliant: Yes
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, P, MLP6; Transistor Polarity:P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-700mV; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Pulse Current Idm:24A; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +3.01%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)6.6 A
Current Rating-6.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-700 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.4 W
Rds On Max42 mΩ
Resistance42 MΩ
Rise Time9 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-700 mV
Turn-Off Delay Time42 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-20 V
Dimensions
Height850 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità