onsemi FDH50N50

500V N-channel Mosfet | Mosfet N-ch 500V 48A TO-247
Obsolete
Scheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
AvnetFDH50N500450
5d
Microchip USAFDH50N50250600Tube
7d
Component Stockers USAFDH50N50774
>1wk
Win SourceWS-FDH50N50206
5h
Worldway ElectronicsFDH50N5027.9147Tube
4h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDH50N50.

IHS

Datasheet8 pagine21 anni fa

Mouser

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-12-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-08-31
LTD Date2009-02-28

Parti correlate

onsemiFDH50N50-F133
N-Channel Power MOSFET, UniFETTM, 500 V, 48 A, 105 mΩ, TO-247
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N-Channel Power MOSFET, UniFETTM, 500 V, 44 A, 120 mΩ, TO-247
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InfineonIPW65R080CFDAFKSA1
Power MOSFET, AEC-Q101, N Channel, 650 V, 43.3 A, 0.072 ohm, TO-247, Through Hole
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InfineonIPW65R099C6FKSA1
278W 20V 2.5V 127nC@ 10V 1N 650V 99m¦¸@ 10V 38A 2.78nF@ 100V TO-247 16.13mm*5.21mm*21.1mm
Dettagli
STMicroelectronicsSTW45NM50
N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
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STMicroelectronicsSTW45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-247 package
Dettagli

Descrizioni

Descrizioni di onsemi FDH50N50 fornite dai suoi distributori.

500V N-Channel MOSFET | MOSFET N-CH 500V 48A TO-247
Win Source
Diodes - Small Signal 500V N-Channel UniFET
Mouser
Power Field-Effect Transistor, 48A I(D), 500V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IHS
MOSFET, N, TO-247 TUBE 30; Transistor type:MOSFET; Voltage, Vds typ:500V; Current, Id cont:48A; Resistance, Rds on:0.089R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-247 (SOT-249); Case style, alternate:SOT-249; Current, Idm pulse:192A; Pins, No. of:3; Power dissipation:625W; Power, Pd:625W; Power, Ptot:625W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Radial Leaded; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:500V
Farnell

Immagini

Farnell
Rochester Electronics
UTSource

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