onsemi FDG6318PZ
Obsolete
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-06
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
VishaySI1553CDL-T1-GE3
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
Descrizioni
Descrizioni di onsemi FDG6318PZ fornite dai suoi distributori.
Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R
Avnet Japan
Digital FET -20 V, Dual P-Channel, -0.5 A, 780 mΩ
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 20V 0.5A 6-Pin SC-88 T/R
20V/12V 780Mo Pch Dual Rohs Compliant: Yes
MOSFET, DUAL P-CH, -20V, -0.5A, SC-70-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -500mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Vol
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating-500 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance780 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance85.4 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max780 mΩ
Resistance780 MΩ
Rise Time13 ns
Schedule B8541210080
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità