onsemi FDG316P
Obsolete
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-12-29
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Parti correlate
VishaySQ1431EH-T1_GE3
Aec-Q101 Qualified P-Ch 30-V 175C Mosfet Rohs Compliant: Yes |Vishay SQ1431EH-T1_GE3
Diodes Inc.DMN100-7-F
DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V
Diodes Inc.DMP3030SN-7
Power MOSFET, P Channel, 30 V, 700 mA, 250 Milliohms, SC-59, 3 Pins, Surface Mount
Descrizioni
Descrizioni di onsemi FDG316P fornite dai suoi distributori.
Logic Level PowerTrench® MOSFET, P-Channel, -30 V, -1.6 A, 190 mΩ
30V 1.6A 750mW 190m´Î@10V1.6A 3V@250Ã×A P Channel SC-70-6 MOSFETs ROHS
Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 30V 1.6A 6-Pin SC-88 T/R
Sc70-6 Single Pch 30V Rohs Compliant: Yes
006, PLASTIC MOLDED SC70-6 LEAD PACKAGE, SMD<AZ
SMALL SIGNAL FIELD-EFFECT TRANSI
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
P CHANNEL MOSFET, -30V, 1.6A, SC-70; Tra; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.6A; Device Marking:.36; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating1.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance165 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage-1.6 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)30 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità