onsemi FDG315N
$ 0.26
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-12-29
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
VishaySQ1431EH-T1_GE3
Aec-Q101 Qualified P-Ch 30-V 175C Mosfet Rohs Compliant: Yes |Vishay SQ1431EH-T1_GE3
Diodes Inc.DMP3030SN-7
Power MOSFET, P Channel, 30 V, 700 mA, 250 Milliohms, SC-59, 3 Pins, Surface Mount
Descrizioni
Descrizioni di onsemi FDG315N fornite dai suoi distributori.
Logic Level PowerTrench® MOSFET, N-Channel, 30 V, 2 A, 120 mΩ
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(On):0.12Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Product Range:- Rohs Compliant: Yes
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
N CHANNEL MOSFET, 30V, 2A, SC-70; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Device Marking:.15; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance220 pF
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max120 mΩ
Resistance120 MΩ
Rise Time11 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time7 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)30 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità