onsemi FDC8602
$ 0.711
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Cronologia dell'inventario
Tendenza a 3 mesi: +7.68%
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-07-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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MOSFET N-CH 100V 1.5A SOT-23-6 / Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
Diodes Inc.ZXMP10A17E6QTA
ZXMP10A17 Series P-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount - SOT-23-6
Descrizioni
Descrizioni di onsemi FDC8602 fornite dai suoi distributori.
Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ
Transistor MOSFET Array Dual N-CH 100V 1.2A 6-Pin TSOT-23 T/R
Avnet Japan
PT5 100/20V Nch PowerTrench MOSFET - 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
960mW 20V 4V@ 250¦ÌA 2nC@ 10V 2N 100V 350m¦¸@ 1.2A,10V 1.2A 70pF@50V SOT 2.9mm*1.6mm*1.1mm
100 V, 1.2 A, 350 MILLI OHM DUAL N-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, DUAL N-CH, 100V, 1.2A, SUPERSOT; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.285ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltag
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +7.68%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)1.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time2.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance70 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation690 mW
Rds On Max350 mΩ
Rise Time1.7 ns
Schedule B8541210080
Threshold Voltage3.2 V
Turn-Off Delay Time5.4 ns
Turn-On Delay Time3.5 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità