onsemi FDC6310P
$ 0.223
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Cronologia dell'inventario
Tendenza a 3 mesi: -72.68%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-08-31
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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ZXM61N02F 20 V 0.18 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23
VishaySI2302DDS-T1-GE3
VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V
InfineonBSS806NH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
Descrizioni
Descrizioni di onsemi FDC6310P fornite dai suoi distributori.
MOSFET Transistor, Dual P Channel, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ
Transistor MOSFET Array Dual P-CH 20V 2.2A 6-Pin TSOT-23 T/R
Avnet Japan
960mW 12V 1.5V@ 250µA 5.2nC@ 4.5V 2individualPChannel 20V 125mΩ@ 2.2A,4.5V 2.2A 337pF@10V SOT SMD mount 2.9mm*1.6mm*1.1mm
MOSFET, 2 P-CH, -20V, -2.2A, SOT-23-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -2.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 960mW; Transistor Case Style: SOT-23; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -72.68%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)2.2 A
Current Rating-2.2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance337 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation960 mW
Rds On Max125 mΩ
Resistance125 MΩ
Rise Time12 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità