onsemi FDB8030L
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FDB8030L fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
N-Channel 30V 3.5 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 80A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:187W; Operating Temperature Min:-65°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time200 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.5 nF
Max Operating Temperature175 °C
Max Power Dissipation187 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Elements1
PackagingCut Tape
Power Dissipation187 W
Rds On Max3.5 mΩ
Resistance3.5 MΩ
Rise Time185 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time160 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)30 V
Dimensions
Height4.83 mm
Length10.97 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità