onsemi FDB15N50
$ 1.939
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Cronologia dell'inventario
Tendenza a 3 mesi: +17.37%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTB14NM50N
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
STMicroelectronicsSTB11N52K3
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
STMicroelectronicsSTB28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
InfineonSPB16N50C3
Mosfet Transistor, N Channel, 16 A, 560 V, 0.25 Ohm, 10 V, 3 V Rohs Compliant: Yes
Descrizioni
Descrizioni di onsemi FDB15N50 fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK
N-Channel 500 V 0.38 Ohm 41 nC Surface Mount SMPS Power Mosfet -D2PAK-3
Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,N CH,500V,15A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:500V; On Resistance Rds(on):330mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Power Dissipation Pd:300W; Voltage Vgs Max:30V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +17.37%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.85 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.4 V
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time5.4 ns
Schedule B8541290080
Threshold Voltage3.4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)500 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDB15N50.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità