Infineon IPB60R199CPATMA1
$ 1.69
NRND
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Distributori autorizzati
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Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IPB60R199CPATMA1 | 1000 | 1K | |||||||||
| DigiKey | IPB60R199CPATMA1CT-ND | 3086 | 1 | Cut Tape | ||||||||
| Avnet | IPB60R199CPATMA1 | 0 | 1K | 16h | ||||||||
| Future Electronics | IPB60R199CPATMA1 | 0 | 1K | Tape & Reel | ||||||||
| Farnell | IPB60R199CPATMA1 | 0 | 1 | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.16%
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Schede tecniche e documenti
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Modelli CAD
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|---|---|---|---|
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 SnapEDA | Impronta | Scarica |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-04
Lifecycle StatusNRND (Last Updated: 4 months ago)
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Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
STMicroelectronicsSTB28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
Descrizioni
Descrizioni di Infineon IPB60R199CPATMA1 fornite dai suoi distributori.
Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R
139W 20V 2.5V 32nC@ 10V 1N 650V 199m¦¸@ 10V 16A 1.52nF@ 100V TO-263 , 10mm*9.25mm*4.4mm
MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
IPB60R199CP Infineon Technologies
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:139W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-263; Power Dissipation Pd:139W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)16 A
Drain to Source Resistance199 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance199 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation139 W
Rise Time5 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time10 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPB60R199CPATMA1.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità