onsemi FDB0250N807L
$ 2.526
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FDB0250N807L | 107 | 1 | Cut Tape | ||||||||
| Arrow Electronics | FDB0250N807L | 15.200 | 800 | |||||||||
| Verical | FDB0250N807L | 245 | 119 | |||||||||
| Rochester Electronics | FDB0250N807L | 985 | 21h | |||||||||
| DigiKey | FDB0250N807LCT-ND | 290 | 1 | Cut Tape |
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-03-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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InfineonIPB180N08S402ATMA1
80V, N-Ch, 2.2 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS
Descrizioni
Descrizioni di onsemi FDB0250N807L fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 80V, 240A, 2.2mΩ
FAIRCHILD SEMICONDUCTOR FDB0250N807L MOSFET Transistor, N Channel, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 VNew
MOSFET, N-CH, 80V, 240A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.9V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.312 g
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.4 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation214 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max2.2 mΩ
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time79 ns
Turn-On Delay Time45 ns
Dimensions
Height4.9 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDB0250N807L.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità