onsemi FCU900N60Z
$ 0.906
EOL
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Cronologia dell'inventario
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Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-08-01
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2024-04-02
LTD Date2024-10-02
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Parti correlate
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20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A IPAK
Descrizioni
Descrizioni di onsemi FCU900N60Z fornite dai suoi distributori.
N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK
Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
N-CHANNEL SUPERFET II MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-251
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight539 mg
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage675 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation52 W
Rds On Max900 mΩ
Rise Time5.3 ns
Threshold Voltage2.5 V
Turn-Off Delay Time33.6 ns
Turn-On Delay Time10.9 ns
Dimensions
Height7.57 mm
Length6.8 mm
Width2.5 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità