onsemi FCP4N60
$ 1.05
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FCP4N60 | 6909 | 19h | |||||||||
| Farnell | FCP4N60 | 0 | 1 | 19h | ||||||||
| element14 APAC | FCP4N60 | 0 | 1 | 1d | ||||||||
| Microchip USA | FCP4N60 | 133 | 150 | Tube | 7d | |||||||
| Win Source | WS-FCP4N60 | 5480 | 175 | 19h |
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-28
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-01-03
LTD Date2024-07-03
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
InfineonSPP04N60C3XKSA1
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 50W; -55+150 deg.C; THT; TO220
Descrizioni
Descrizioni di onsemi FCP4N60 fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220
Transistor: N-MOSFET; unipolar; 600V; 3.9A; 1.2ohm; 50W; -55+150 deg.C; THT; TO220
N-Channel 600 V 1.2 Ohm Flange Mount SuperFET Mosfet - TO-220
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.9A; Package / Case:TO-220; Power Dissipation Pd:50mW; Pulse Current Idm:11.7A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)3.9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance540 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time45 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time36 ns
Turn-On Delay Time16 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità