onsemi FCP400N80Z
$ 1.707
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Cronologia dell'inventario
Tendenza a 3 mesi: +6.21%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-12-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiFCP380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220
STMicroelectronicsSTP15NM60ND
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
Descrizioni
Descrizioni di onsemi FCP400N80Z fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
MOSFET N-CH 800V 14A TO220-3 / N-Channel 800 V 14A (Tc) 195W (Tc) Through Hole TO-220-3
Power Field-Effect Transistor, 14A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
195W(Tc) 20V 4.5V@1.1mA 56nC@ 10V 1individualNChannel 800V 400mΩ@ 5.5A,10V 14A 2.35nF@1000V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
MOSFET, N-CH, 800V, 14A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; P
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +6.21%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Input Capacitance2.35 nF
Max Operating Temperature150 °C
Max Power Dissipation195 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max400 mΩ
Schedule B8541290080
Threshold Voltage4.5 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità