onsemi FCP11N60

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220
$ 1.562
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
VericalFCP11N60950950
Rochester ElectronicsFCP11N60172
23h
DigiKeyFCP11N60-ND16021Tube
NewarkFCP11N600150
Onlinecomponents.comFCP11N600250Bulk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FCP11N60.

Newark

Datasheet0 pagine0 anni fa
Datasheet11 pagine26 anni fa
Datasheet10 pagine22 anni fa
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IHS

onsemi

Farnell

element14

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
onsemiFCP11N60
InfineonSPP11N60C3XKSA1
InfineonSPP11N60C3XKSA1
Price @ 1000
$ 1.562
$ 1.246
$ 1.246
Stock
213,690
829,063
829,063
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
5 V
-
-
Rds On Max
380 mΩ
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
30 V
20 V
20 V
Power Dissipation
125 W
125 W
125 W
Input Capacitance
1.49 nF
1.2 nF
1.2 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FCP11N60 fornite dai suoi distributori.

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220
onsemi
N-Channel 600 V 0.38 O 125 W 52 nC Flange Mount SuperFET FRFET Mosfet - TO-220
Future Electronics
Trans MOSFET N-CH 600V 11A 3-Pin (3+Tab) TO-220AB Rail
Verical
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
element14 APAC
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

Immagini

RS
TME
Farnell
Future Electronics
Conrad
Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FCP11N60.