onsemi FCI25N60N-F102
$ 2.35
EOL
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-06-18
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Parti correlate
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Power MOSFET, N Channel, 650 V, 31 A, 90 Milliohms, TO-220, 3 Pins, Through Hole
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Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube / CoolMOS Power Transistor
STMicroelectronicsSTI33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
STMicroelectronicsSTI40N65M2
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package
STMicroelectronicsSTFI34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in I2PAKFP package
InfineonIPI60R125CPXKSA1
N-Channel 650 V 25 A 208 W 125 mOhm Surface Mount Mosfet - PG-TO262-3-1
Descrizioni
Descrizioni di onsemi FCI25N60N-F102 fornite dai suoi distributori.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 600V, 25A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
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Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.352 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation216 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation216 W
Rds On Max125 mΩ
Rise Time22 ns
Turn-Off Delay Time68 ns
Turn-On Delay Time21 ns
Dimensions
Height15.01 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCI25N60N-F102.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità