onsemi FCB36N60NTM
Obsolete
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Distributori autorizzati
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Distributore
SKU
Min
Pkg
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Cronologia dell'inventario
Trend storico dell'inventario non disponibile
Modelli CAD
0 modelli disponibili
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCB36N60NTM.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-10-22
Lifecycle StatusObsolete (Last Updated: 12 hours ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 12 hours ago)
Parti correlate
VishaySIHB30N60E-GE3
MOSFET, N CH, 600V, 29A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTB45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB36NM60ND
MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Descrizioni
Descrizioni di onsemi FCB36N60NTM fornite dai suoi distributori.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK
MOSFET N-CH 600V 36A D2PAK / Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 36A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Trend storico dell'inventario non disponibile
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.762 g
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.785 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation312 W
Rds On Max90 mΩ
Resistance90 MΩ
Rise Time22 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time94 ns
Turn-On Delay Time23 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCB36N60NTM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità