onsemi FCB20N60FTM

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
$ 2.625
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Technical Drawing1 pagina5 anni fa

Newark

Farnell

onsemi

Fairchild Semiconductor

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 2.625
$ 2.61
$ 2.61
Stock
205,328
237,314
237,314
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
-
5 V
5 V
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
208 W
208 W
208 W
Input Capacitance
3.08 nF
3.08 nF
3.08 nF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FCB20N60FTM fornite dai suoi distributori.

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
Power MOSFET, N Channel, 600 V, 20 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FCB20N60FTM.