onsemi DTC114YET1G
$ 0.033
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DTC114YET1G | 3000 | 3K | Tape & Reel | ||||||||
| Verical | DTC114YET1G | 36.000 | 3K | |||||||||
| Arrow Electronics | DTC114YET1G | 25.165 | 1 | |||||||||
| Rochester Electronics | DTC114YET1G | 450.000 | 2h | |||||||||
| DigiKey | DTC114YET1GOSCT-ND | 2597 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: -4.36%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi DTC114YET1G.
Modelli CAD
Scarica il simbolo onsemi DTC114YET1G, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.033
$ 0.044
$ 0.044
Stock
2,883,005
606,989
606,989
Authorized Distributors
6
2
2
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-416
-
-
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
-
-
hFE Min
80
80
80
Power Dissipation
200 mW
200 mW
200 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiDTC115EET1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiDTC124XET1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiDTC124EET1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ToshibaRN1106,LF(CT
Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
ToshibaRN1107,LF(CT
300mV@ 250¦ÌA,5mA NPN - Pre-Biased 100mW 6V 500nA 50V 100mA SOT-416-3 1.6mm*800¦Ìm*700¦Ìm
NXP SemiconductorsBC847BT,115
Bipolar (BJT) Single Transistor, NPN, 45 V, 150 mW, 100 mA, 200
Descrizioni
Descrizioni di onsemi DTC114YET1G fornite dai suoi distributori.
Bipolar Transistors (BJT); DTC114YET1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
NPN Bipolar Digital Transistor (BRT)
DTC114YET1G NPN DIGITAL TRANSISTOR,100 MA 50V 10 KOHMS, RATIO OF 0.21,3-PIN SC-75
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R
DTC Series Surface Mount NPN Digital Transistor - SC-75
NPN - Pre-Biased 200mW 100mA 50V SC-75(SOT-523) Digital Transistors ROHS
BRT TRANSISTOR, 50V, 47K/10KOHM, SC75; C; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47k
Brt Transistor, 50V, 47K/10Kohm, Sc75; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:50V; Núm. De Contactos:3; Nivel De Sensibilidad A La Humedad (Msl):Msl 1 - Unlimited; Continuous Collector Current Max:100Ma |Onsemi DTC114YET1G
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -4.36%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi DTC114YET1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità