onsemi BSS123W

N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6Ω
$ 0.06
EOL
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DistributorSKUMinPkg
AvnetBSS123W164.90010823
4d
Arrow Electronics
2
BSS123W56841
Rochester ElectronicsBSS123W4333
20h
Flip ElectronicsBSS123W164.900
6d
element14 APAC
2
BSS123W05Cut Tape
9h

Schede tecniche e documenti

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Technical Drawing1 pagina3 anni fa

Farnell

IHS

onsemi

Fairchild Semiconductor

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2015-12-16
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2021-12-24
LTD Date2021-12-24
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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Descrizioni

Descrizioni di onsemi BSS123W fornite dai suoi distributori.

N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6Ω
onsemi
Mosfet, N-Ch, 100V, 0.17A, 0.2W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi BSS123W
Newark
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.
Fairchild Semiconductor

Immagini

element14 APAC
RS
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