onsemi BSR14
$ 0.125
Production
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: +28.86%
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1 parte disponibile
Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.125
$ 0.112
Stock
3,047,851
1,255,773
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
Max Collector Current
800 mA
800 mA
Transition Frequency
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
40
40
Power Dissipation
350 mW
250 mW
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount
onsemiKST4401MTF
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.MMBT4401-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount
Diodes Inc.BC817-40-7-F
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 310 mW, SOT-23, Surface Mount
Descrizioni
Descrizioni di onsemi BSR14 fornite dai suoi distributori.
Bipolar Transistors - BJT NPN Transistor General Purpose
40V 350mW 35@0.1mA,10V 800mA NPN SOT-23 Bipolar (BJT) ROHS
Bipolar Transistors (BJT); BSR14; ON SEMICONDUCTOR; NPN; 3; 40 V; 800 mA
Trans GP BJT NPN 40V 0.8A 350mW 3-Pin SOT-23 T/R / TRANS NPN 40V 0.8A SOT23
BSR14 Series 40 V CE Breakdown 0.8 A NPN General Purpose Amplifier - SOT-23
NPN SWITCHING TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
40V 350mW 800mA 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 300; No. of Pins: 3
onsemi NPNTransistor, SOT-23encapsulation, SMD mount, Maximum DC collector current800mA, maximum collector-emission voltage40 V
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 350 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +28.86%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min40
Max Breakdown Voltage40 V
Max Collector Current800 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BSR14.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità