onsemi BS170-D27Z
$ 0.129
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BS170-D27Z | 4000 | 2K | 3d | ||||||||
| Newark | BS170-D27Z | 69 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BS170-D27Z | 10.000 | 2K | |||||||||
| Verical | BS170_D27Z | 10.000 | 2K | |||||||||
| Master Electronics | BS170-D27Z | 10.000 | 2K |
Cronologia dell'inventario
Tendenza a 3 mesi: +9.83%
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1 parte disponibile
Schede tecniche e documenti
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Price @ 1000
$ 0.129
$ 0.156
$ 0.156
Stock
231,742
829,696
829,696
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
TO-92-3
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
500 mA
500 mA
500 mA
Threshold Voltage
2.1 V
2.1 V
2.1 V
Rds On Max
5 Ω
5 Ω
5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
830 mW
830 mW
830 mW
Input Capacitance
40 pF
40 pF
40 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi BS170-D27Z fornite dai suoi distributori.
N-Channel 60 V 500 mA 830 mW Through Hole Metal Oxide Mosfet - TO-92-3
FAIRCHILD SEMICONDUCTORBS170_D27ZN CHANNEL MOSFET, 60V, 500mA, TO-92
N-Channel Small Signal MOSFET 60V, 500mA, 5Ω
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
N CHANNEL MOSFET, 60V, 500mA, TO-92; Cha; N CHANNEL MOSFET, 60V, 500mA, TO-92; Channel Type: N Channel; Drain Source Voltage Vds: 60V; Continuous Drain Current Id: 500mA; Transistor Mounting: Through Hole; Rds(on) Test Volta
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +9.83%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-92-3
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight286 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation830 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Length6.35 mm
Width6.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BS170-D27Z.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità