onsemi BCP56-16T1G
$ 0.171
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Min
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Cronologia dell'inventario
Tendenza a 3 mesi: +1960%
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1 parte disponibile
Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.171
$ 0.17
$ 0.17
Stock
9,372,932
3,471,103
3,471,103
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-223-4
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
130 MHz
130 MHz
130 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
500 mV
hFE Min
100
40
40
Power Dissipation
1.5 W
1.5 W
1.5 W
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiBCP56-10T1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 A, 1.5 W, SOT-223, Surface Mount
Descrizioni
Descrizioni di onsemi BCP56-16T1G fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 A, 1.5 W, SOT-223, Surface Mount
TRANSISTOR, BIPOLAR, SI, NPN, MEDIUM POWER, VCEO 80VDC, IC 1A, PD 1.5W, SOT-223,HFE 25
80V 1.5W 100@150mA,2V 1A NPN SOT-223 Bipolar Transistors - BJT ROHS
TRANS NPN 80V 1A SOT-223 / Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R
1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 100 to 250
Bipolar Transistors (BJT); BCP56-16T1G; ON SEMICONDUCTOR; NPN; 4; 80 V; 1 A
ON Semiconductor BCP56-16T1G Transistor NPN 80V 1A TO-220 Epitaxial Silicon
BCP Series 80 V 1.5 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223
Bipolar Transistors - BJT 1A 100V NPN
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans Bjt Single, Npn, 80V, 1A; |Onsemi BCP56-16T1G.
ON Semiconductor NPNTransistor, SOT-223 (SC-73)encapsulation, SMD mount, Maximum DC collector current1 A, maximum collector-emission voltage80 V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 25 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +1960%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Number of Terminals4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min100
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BCP56-16T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità