onsemi BC858BWT1G
$ 0.027
Production
Prezzo e stock
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Distributori di stock non autorizzati
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Cronologia dell'inventario
Tendenza a 3 mesi: -2.91%
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BC858BWT1G.
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Questo componente
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Price @ 1000
$ 0.027
$ 0.03
$ 0.03
Stock
3,166,871
6,037,316
6,037,316
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SC
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
650 mV
-650 mV
-650 mV
hFE Min
220
220
220
Power Dissipation
150 mW
-
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz
Descrizioni
Descrizioni di onsemi BC858BWT1G fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
ON SEMI BC858BWT1G PNP BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SC-70
BC Series 30 V 100 mA SMT PNP Silicon General Purpose Transistor - SOT-323
Bipolar Transistors - BJT 100mA 30V PNP
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT PNP 30V 0.1A Automotive 3-Pin SC-70 T/R
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
TRANSISTOR, PNP, -30V, -0.1A, SC-70; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE;
Bipolar Transistor, Pnp, -30V Sc-70; Collector Emitter Voltage V(Br)Ceo:30V; Continuous Collector Current Ic:100Ma; Dc Collector Current:-100Ma; Dc Current Gain Min (Hfe):220; Dc Current Gain Hfe:290; No. Of Pins:3 Rohs Compliant: Yes |Onsemi BC858BWT1G
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSC
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min220
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)-30 V
Dimensions
Height900 µm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BC858BWT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità