onsemi 2SB1203S-TL-E
$ 0.476
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi 2SB1203S-TL-E.
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.476
$ 0.449
$ 0.449
Stock
85,095
106,218
106,218
Authorized Distributors
5
4
4
Mount
-
-
-
Case/Package
TO-252-3
TO-252-3
TO-252-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
5 A
5 A
5 A
Transition Frequency
180 MHz
180 MHz
180 MHz
Collector Emitter Saturation Voltage
400 mV
400 mV
400 mV
hFE Min
35
35
35
Power Dissipation
1 W
1 W
1 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2012-06-05
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descrizioni
Descrizioni di onsemi 2SB1203S-TL-E fornite dai suoi distributori.
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. ONSSPCDDENY1E7M;
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
ON SEMI 2SB1203S-TL-E PNP BIPOLAR TRANSISTOR, 5 A, 50 V, 3-PIN TP-FA
Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) DPAK T/R
TRANSISTOR, PNP, -50V, -5A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 20W; DC Collector Current: -5A; DC Current Gain hFE: 140hFE; Transi
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-252-3
Contact PlatingTin Bismuth
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Gain Bandwidth Product130 MHz
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current5 A
Max Frequency130 MHz
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation1 W
Transition Frequency180 MHz
Dimensions
Height5.5 mm
Length6.5 mm
Width2.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi 2SB1203S-TL-E.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità