onsemi 2N7002ET1G
$ 0.054
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 2N7002ET1GOSCT-ND | 36.147 | 1 | Cut Tape | ||||||||
| Future Electronics | 2N7002ET1G | 4.764.000 | 3K | Tape & Reel | ||||||||
| Avnet | 2N7002ET1G | 288.000 | 3K | 18h | ||||||||
| Newark | 2N7002ET1G | 4248 | 1 | Cut Tape | ||||||||
| Master Electronics | 2N7002ET1G | 282.000 | 3K |
Cronologia dell'inventario
Tendenza a 3 mesi: -12.58%
Modelli CAD
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Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi 2N7002ET1G.
Modelli CAD
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|---|---|---|---|
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Questo componente
Parti alternative
Price @ 1000
$ 0.054
$ 0.054
Stock
18,298,397
6,423,125
Authorized Distributors
6
6
Mount
-
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
260 mA
250 mA
Threshold Voltage
1 V
-
Rds On Max
2.5 Ω
3 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 mW
540 mW
Input Capacitance
26.7 pF
50 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiNTR5105PT1G
Single P−Channel Power MOSFET -60V, -211mA, 5Ω -60 V, -211 mA, Single P-Channel SOT-23 Package
Diodes Inc.2N7002E-7-F
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
Descrizioni
Descrizioni di onsemi 2N7002ET1G fornite dai suoi distributori.
2N7002E: Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23
2N7002ET1G N-CHANNEL MOSFET TRANSISTOR, 0.26 A, 60 V, 3-PIN SOT-23
N-Channel 60 V 2.5 O 300 mW 0.81 nC Surface Mount Small Signal Mosfet - SOT-23
Transistor MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R
Avnet Japan
MOSFETs- Power and Small Signal SMALL SIGNAL MOSFET 60V 310mA SINGL CH
MOSFET N-CH 60V 0.26A SOT-23 - only ON S
MOSFET NFET SOT23 60V 310mA 2.5Ohms
Small Signal Field-Effect Transistor, 0.26A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N Channel Mosfet, 60V, 310Ma Sot-23, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:310Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:420Mw Rohs Compliant: Yes |Onsemi 2N7002ET1G.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 310 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.6 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 4.8 / Turn-ON Delay Time ns = 1.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 420
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -12.58%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)260 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time1.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance26.7 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation300 mW
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time1.2 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time4.8 ns
Turn-On Delay Time1.7 ns
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi 2N7002ET1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità