onsemi 2N6491G
$ 0.705
Production
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SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: +6.93%
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Questo componente
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Price @ 1000
$ 0.705
$ 1.755
Stock
620,460
299,545
Authorized Distributors
6
2
Mount
-
-
Case/Package
TO-220-3
TO-220-3
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
15 A
15 A
Transition Frequency
5 MHz
2 MHz
Collector Emitter Saturation Voltage
3.5 V
1.3 V
hFE Min
5
5
Power Dissipation
1.8 W
1.8 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi 2N6491G fornite dai suoi distributori.
TRANSISTOR, BIPOLAR, SI, PNP, POWER, VCEO 80VDC, IC 15A, PD 75W, TO-220AB, VCBO 90VDC
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTOR Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, NPN, 80 V, 15 A
80V 1.8W 15A PNP TO-220-3 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 80V 15A 1800mW 3-Pin(3+Tab) TO-220AB Tube
onsemi PNPTransistor, TO-220encapsulation, Through hole mounting, Maximum DC collector current-15 A, maximum collector-emission voltage-80 V
BIPOLAR, TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:1.8W; DC Collector Current:-15A; DC Current Gain hFE:5; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:20V; Gain Bandwidth ft Typ:5MHz; Hfe Min:150; Package / Case:3-TO-220
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +6.93%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)90 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage3.5 V
Collector Emitter Voltage (VCEO)80 V
Current Rating15 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency5 MHz
Gain Bandwidth Product5 MHz
hFE Min5
Max Collector Current15 A
Max Frequency5 MHz
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation1.8 W
Schedule B8541290080
Transition Frequency5 MHz
Voltage Rating (DC)-80 V
Dimensions
Height15.75 mm
Length10.28 mm
Width4.82 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità