NXP Semiconductors MRFE6VP6300HR3

RF Power Transistor, 1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RFMWMRFE6VP6300HR301
20h
FarnellMRFE6VP6300HR301Cut Tape
19h
Worldway ElectronicsMRFE6VP6300HR342217Tape & Reel
19h
IC Components Ltd.MRFE6VP6300HR34299
18h
AztechMRFE6VP6300HR3675
15h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRFE6VP6300HR3.

NXP Semiconductors

Datasheet15 pagine14 anni fa

IHS

Freescale Semiconductor

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Parti alternative

Questo componente
Parti alternative
NXP SemiconductorsMRFE6VP6300HR3
NXP SemiconductorsMRFE6VP6300HR5
Price @ 1000
$ 174.81
Stock
103,881
109,339
Authorized Distributors
2
6
Mount
Screw, Surface Mount
Screw, Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
130 V
130 V
Continuous Drain Current (ID)
-
100 mA
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
1.05 kW
1.05 kW
Input Capacitance
-
-

Supply Chain

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

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NXP SemiconductorsMRFE6VP5600HR6
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
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NXP SemiconductorsMRFE6VP5600HSR5
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
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VishayIRLL110TRPBF
IRLL110TRPBF N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 100 V, 3 + TAB-PIN SOT-223
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VishayIRLR110PBF
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
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VishayIRLR110TRPBF
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
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Descrizioni

Descrizioni di NXP Semiconductors MRFE6VP6300HR3 fornite dai suoi distributori.

RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
RFMW
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Freescale Semiconductor
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Semicontronic
RF FET, 1.8MHZ-600MHZ, NI-780S; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.05kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-780S; No. o
Farnell

Immagini

RFMW
Lanka Micro
UTSource

Alias del produttore

NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:

  • NXP
  • PHILIPS
  • PHIL
  • NXP USA Inc
  • PHI
  • PHILLIPS
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • NXP/PHILIPS
  • PHILIPS SEMICONDUCTOR
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
  • PHILIPS ECG
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP