NXP Semiconductors MRF6V2010NBR1
Obsolete
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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2007-02-26
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2020-10-14
LTD Date2021-04-14
Parti correlate
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Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V/ REEL RoHS Compliant: Yes
NXP SemiconductorsMW6S010GNR1
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
Descrizioni
Descrizioni di NXP Semiconductors MRF6V2010NBR1 fornite dai suoi distributori.
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
NXP Semiconductors SCT
23.9 dB Compliant Screw, Surface Mount 1.196095 g 220 MHz Contains Lead Tape and Reel TO-270-2
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageTO-270-2
Contact PlatingTin
MountScrew, Surface Mount
Number of Terminals2
Weight1.196095 g
Technical
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Frequency220 MHz
Gain22.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency450 MHz
Max Operating Temperature225 °C
Max Output Power10 W
Min Breakdown Voltage110 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power10 W
PackagingTape and Reel
Test Current30 mA
Test Voltage50 V
Voltage Rating110 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità