Nexperia PBSS305PX,115

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
$ 0.421
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
TME
2
PBSS305PX.11501
7h
NewarkPBSS305PX,11501KTape & Reel
AvnetPBSS305PX,11504K
9h
element14 APACPBSS305PX,11501KTape & Reel
2h
Farnell
3
PBSS305PX,11501Cut Tape
7h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Nexperia PBSS305PX,115.

Scheda dati ufficiale10 anni fa

Cronologia dell'inventario

Trend di 3 mesi:
-100%
Powered bySpectra logo

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-23
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

Parti correlate

Diodes Inc.ZXTP2012ZTA
Bipolar (BJT) Single Transistor, PNP, 80 V, 4.3 A, 1.5 W, SOT-89, Surface Mount
Dettagli
Diodes Inc.ZXTP2013ZTA
ZXTP2013Z Series PNP 100 V 3.5 A Medium Power Transistor SMT - SOT-89-3
Dettagli
ROHM2SB1260T100R
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Dettagli
ROHM2SB1260T100Q
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Dettagli
Diodes Inc.BSR33TA
BSR33 Series PNP 80 V 1 A 1 W Power Transistor - SOT-89
Dettagli
ROHM2SB1561T100Q
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Dettagli

Descrizioni

Descrizioni di Nexperia PBSS305PX,115 fornite dai suoi distributori.

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
IHS
80 V, 4.0 A PNP low VCEsat transistor
Nexperia
Trans GP BJT PNP 80V 4A Automotive 4-Pin(3+Tab) SOT-89 T/R
Verical
420mV@ 235mA,4.7A PNP 600mW 5V 100nA 80V 80V 4A SOT-89 4.6mm*2.6mm*1.6mm
UnikeyIC
80V 600mW 4A 70@5A2V 100MHz 300mV@4.7A235mA PNP +150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Dasenic
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:2.1W; DC Collector Current:-4A; DC Current Gain Max (hfe):280 ;RoHS Compliant: Yes
Newark
TRANS PNP 80V 4A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Power Dissipation Pd:600mW; DC Collector Current:-4A; DC Current Gain hFE:280; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-50mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-89; Power Dissipation Pd:600mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
element14 APAC

Immagini

Nexperia
element14 APAC
element14
Newark
element14 APAC
Future Electronics
TME
Rochester Electronics

Alias del produttore

Nexperia ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Nexperia può anche essere conosciuto con i seguenti nomi:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • PBSS305PX 115
  • PBSS305PX115