Nexperia BC856B
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Distributori di stock non autorizzati
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Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2004-06-30
Parti correlate
Descrizioni
Descrizioni di Nexperia BC856B fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
65V 200mW 220@2mA,5V 100mA PNP SOT-23-3 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 65V 0.1A Automotive 3-Pin TO-236AB
TRANSISTOR, PNP SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: -; Power Dissipation Pd: 250mW; DC Collector Current: -100mA; DC Current Gain hFE: 220hFE; Transistor Case Sty
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:65V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:0.25mW ;RoHS Compliant: Yes
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = -100 / Collector-Emitter Voltage (Vceo) V = -65 / DC Current Gain (hFE) = 220 / Collector-Base Voltage (Vcbo) V = -80 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = -300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = -700 / Reflow Temperature Max. °C = 260
Alias del produttore
Nexperia ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Nexperia può anche essere conosciuto con i seguenti nomi:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage-65 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)65 V
Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min125
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità