Nexperia PDTA143ET

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Nexperia PDTA143ET.

IHS

Datasheet18 pagine14 anni fa
Datasheet0 pagine0 anni fa
Datasheet0 pagine0 anni fa

Farnell

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-02-01
Lifecycle StatusProduction (Last Updated: 3 months ago)

Parti correlate

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
onsemiBC856BMTF
BC856 Series 65 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23
onsemiBC857BMTF
BC857 Series 45 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23
Diodes Inc.MMBT2907A-7-F
Bipolar (BJT) Single Transistor, PNP, 60 V, 600 mA, 310 mW, SOT-23, Surface Mount
Diodes Inc.MMBT4403-7-F
Bipolar (BJT) Single Transistor, PNP, -40 V, 300 mW, -600 mA, 100 RoHS Compliant: Yes
Diodes Inc.MMBT3906-7-F
Single Bipolar Transistor, PNP, 40 V, 200 mA, 350 mW, SOT-23, 3 Pins, Surface Mount

Descrizioni

Descrizioni di Nexperia PDTA143ET fornite dai suoi distributori.

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 3-Pin TO-236AB
Bipolar (BJT) single-bipolar transistor
100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-263AB
Bias Resistor Transistor; Transistor Type:Small Signal Digital (BRT); Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:50V; Continuous Collector Current, Ic:100mA; Base Input Resistor, R1:4.7kohm ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-150mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:10µA; Full Power Rating Temperature:25°C; Hfe Min:20; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; Resistance R1:4.7kohm; Resistance R2:4.7kohm; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:-50V

Alias del produttore

Nexperia ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Nexperia può anche essere conosciuto con i seguenti nomi:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)