Nexperia BC847BV,115
$ 0.108
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Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: +172%
Modelli CAD
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Price @ 1000
$ 0.108
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Stock
3,952,535
34,048,416
34,048,416
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-666
SOT-363
SOT-363
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
300 mV
-
-
hFE Min
200
200
200
Power Dissipation
300 mW
350 mW
350 mW
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-09-12
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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Trans Digital BJT NPN/PNP 50V/40V 100mA/500mA 6-Pin SOT-666 T/R
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Trans Digital BJT NPN/PNP 50V/40V 100mA/500mA 6-Pin SOT-666 T/R
Descrizioni
Descrizioni di Nexperia BC847BV,115 fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
NPN general purpose double transistor
Trans GP BJT NPN 45V 0.1A Automotive 6-Pin SOT-666 T/R
TRANS 2NPN 45V 0.1A SOT666 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 300mW Surface Mount SOT-666
100 mA 45 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
Nexperia NPNTransistor, SSMiniencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage45 V
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA ;RoHS Compliant: Yes
Alias del produttore
Nexperia ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Nexperia può anche essere conosciuto con i seguenti nomi:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
Cronologia dell'inventario
Tendenza a 3 mesi: +172%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-666
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN
Power Dissipation300 mW
Transition Frequency100 MHz
Dimensions
Height600 µm
Length1.7 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità