Infineon SPP20N60CFDXKSA1
$ 2.13
NRND
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.85%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-12-23
Lifecycle StatusNRND (Last Updated: 3 months ago)
Parti correlate
InfineonSPA20N60C3XKSA1
TRANSISTOR, MOSFET, N-CHANNEL, 650V, 20.7A, 0.19 OHM, TO-220FP, COOLMOS POWER
Descrizioni
Descrizioni di Infineon SPP20N60CFDXKSA1 fornite dai suoi distributori.
Transistor MOSFET N-Channel 650V 20.7A 3-Pin TO-220
Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB Tube
650V 20.7A 208W 220m´Î@10V13.1A 5V@1mA N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -5.85%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.7 A
Current Rating20.7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time6.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation208 W
Rds On Max220 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time59 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)650 V
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità