Infineon SPA20N60C3XKSA1
$ 1.485
NRND
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.53%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-05
Lifecycle StatusNRND (Last Updated: 3 months ago)
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Descrizioni
Descrizioni di Infineon SPA20N60C3XKSA1 fornite dai suoi distributori.
TRANSISTOR, MOSFET, N-CHANNEL, 650V, 20.7A, 0.19 OHM, TO-220FP, COOLMOS POWER
Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube
650V 20.7A 34.5W 190m´Î@10V13.1A 3.9V@1mA N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Channel, 650V, 20.7A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:20.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies SPA20N60C3XKSA1.
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5
MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -5.53%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.7 A
Current Rating20.7 A
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation34.5 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity500
Power Dissipation34.5 W
Rds On Max190 mΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time67 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)650 V
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità