Infineon SPB03N60C3ATMA1

Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R
$ 0.464
Obsolete
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
Rochester ElectronicsSPB03N60C3ATMA111.904
20h
Verical
5
SPB03N60C3ATMA18154597
Component Stockers USASPB03N60C3ATMA115.408
1d
Win SourceWS-SPB03N60C3ATMA12011
21h
Worldway ElectronicsSPB03N60C3ATMA116.4327Tape & Reel
19h

Schede tecniche e documenti

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IHS

Datasheet13 pagine21 anni fa

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon SPB03N60C3ATMA1 fornite dai suoi distributori.

Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R
Verical
3.2 A 600 V 1.4 ohm N-CHANNEL Si POWER MOSFET TO-263AB
Component Stockers USA
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
SPB03N60 600V COOLMOS N-CHANNEL POWER M;
Farnell
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Infineon

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