Infineon SI4410DYPBF
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon SI4410DYPBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-22
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
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Descrizioni
Descrizioni di Infineon SI4410DYPBF fornite dai suoi distributori.
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 10A 8-Pin SOIC
MOSFET, 30V, 10A, 13.5 MOHM, 30 NC QG, SO-8
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Planar_Mosfets Rohs Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:SI4410DY; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.585 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Rise Time7.7 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon SI4410DYPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità